Infineon Technologies IRGPS60B120KDP

SKU: IRGPS60B120KDP-9

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Manufacturer Part :
IRGPS60B120KDP
Manufacturer :
Infineon Technologies
Package :
TO-274AA
RoHS :
ROHS3 Compliant
IRGPS60B120KDP Datasheet :
IRGPS60B120KDP

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Turn On Delay Time

72 ns

Mounting Type

Through Hole

Package / Case

TO-274AA

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 15A, 4.7 Ω, 15V

Turn Off Delay Time

366 ns

Operating Temperature

-55°C~150°C TJ

Published

2004

Part Status

Last Time Buy

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

595W

Current Rating

105A

Element Configuration

Single

Power Dissipation

595W

Case Connection

COLLECTOR

Input Type

Standard

Mount

Through Hole

Factory Lead Time

13 Weeks

Gate Charge

340nC

Current - Collector Pulsed (Icm)

240A

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

105A

Reverse Recovery Time

180 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

104 ns

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 60A

Max Junction Temperature (Tj)

150°C

Continuous Collector Current

105A

Turn Off Time-Nom (toff)

411 ns

IGBT Type

NPT

Rise Time

32ns

Transistor Application

MOTOR CONTROL

Switching Energy

3.21mJ (on), 4.78mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

58ns

Height

25.05mm

Length

16.1mm

Width

5.5mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

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