Infineon Technologies IRGS30B60KTRRP

SKU: IRGS30B60KTRRP-9

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Manufacturer Part :
IRGS30B60KTRRP
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IRGS30B60KTRRP Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

260.39037mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Base Part Number

IRGS30B60KPBF

Factory Lead Time

9 Weeks

Published

2005

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Max Power Dissipation

370W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Operating Temperature

-55°C~175°C TJ

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Turn Off Time-Nom (toff)

237 ns

Input Type

Standard

Power - Max

370W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

78A

Max Breakdown Voltage

600V

Turn On Time

74 ns

Element Configuration

Single

Case Connection

COLLECTOR

IGBT Type

NPT

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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