Infineon Technologies IRGSL30B60KPBF

SKU: IRGSL30B60KPBF-9

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Manufacturer Part :
IRGSL30B60KPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IRGSL30B60KPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Number of Pins

3

Weight

2.084002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Element Configuration

Single

Factory Lead Time

11 Weeks

Published

2005

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

370W

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Operating Temperature

-55°C~175°C TJ

Power Dissipation

370W

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

78A

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

Height

9.652mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

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