Infineon Technologies IRGSL4062DPBF

SKU: IRGSL4062DPBF-9

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Manufacturer Part :
IRGSL4062DPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IRGSL4062DPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mounting Type

Through Hole

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Case Connection

COLLECTOR

Published

2009

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Element Configuration

Single

Power Dissipation

250W

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

96A

Transistor Application

POWER CONTROL

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

48A

Reverse Recovery Time

89 ns

Turn On Time

64 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 24A

Turn Off Time-Nom (toff)

164 ns

IGBT Type

Trench

Gate Charge

50nC

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

41ns

Height

9.65mm

Length

10.67mm

Width

4.83mm

Radiation Hardening

No

REACH SVHC

No SVHC

Polarity/Channel Type

N-CHANNEL

RoHS Status

RoHS Compliant

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