Infineon Technologies SGB02N120ATMA1

SKU: SGB02N120ATMA1-9

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Manufacturer Part :
SGB02N120ATMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
SGB02N120ATMA1 Datasheet :
SGB02N120ATMA1

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

6.2A

Number of Elements

1

Test Conditions

800V, 2A, 91 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

16 Weeks

Pbfree Code

no

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Terminal Form

GULL WING

Published

2007

Reach Compliance Code

not_compliant

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

1200V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

62W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

*GB02N120

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 2A

Turn Off Time-Nom (toff)

375 ns

IGBT Type

NPT

Gate Charge

11nC

Current - Collector Pulsed (Icm)

9.6A

Td (on/off) @ 25°C

23ns/260ns

Switching Energy

220μJ

RoHS Status

ROHS3 Compliant

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