Infineon Technologies SGB02N60ATMA1

SKU: SGB02N60ATMA1-9

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Manufacturer Part :
SGB02N60ATMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
SGB02N60ATMA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 2A, 118 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Pbfree Code

no

Part Status

Obsolete

Published

2006

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

30W

Terminal Form

GULL WING

Pin Count

3

Mount

Surface Mount

Factory Lead Time

26 Weeks

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 2A

Turn Off Time-Nom (toff)

354 ns

Power - Max

30W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

6A

Turn On Time

34 ns

Case Connection

COLLECTOR

Element Configuration

Single

IGBT Type

NPT

Gate Charge

14nC

Current - Collector Pulsed (Icm)

12A

Td (on/off) @ 25°C

20ns/259ns

Switching Energy

64μJ

Radiation Hardening

No

RoHS Status

RoHS Compliant

Input Type

Standard

Lead Free

Contains Lead

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