Infineon Technologies SGB30N60ATMA1

SKU: SGB30N60ATMA1-9

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Manufacturer Part :
SGB30N60ATMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
SGB30N60ATMA1 Datasheet :
SGB30N60ATMA1

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

41A

Number of Elements

1

Test Conditions

400V, 30A, 11 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

no

Published

2008

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Terminal Form

GULL WING

Mounting Type

Surface Mount

Factory Lead Time

26 Weeks

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Pin Count

3

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Turn On Time

78 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

391 ns

IGBT Type

NPT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

112A

Td (on/off) @ 25°C

44ns/291ns

Switching Energy

1.29mJ

Base Part Number

GB30N60

RoHS Status

RoHS Compliant

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