Infineon Technologies SPI80N06S2L-05

SKU: SPI80N06S2L-05-11

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Manufacturer Part :
SPI80N06S2L-05
Manufacturer :
Infineon Technologies
Package :
RoHS :
Non-RoHS Compliant
SPI80N06S2L-05 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2003

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

80A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

300W Tc

Operating Temperature

-55°C~175°C TJ

Reach Compliance Code

unknown

Packaging

Tube

Series

OptiMOS™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

55V

Terminal Position

SINGLE

Mounting Type

Through Hole

Mount

Through Hole

Vgs(th) (Max) @ Id

2V @ 250μA

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

4.8m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds

7530pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

230nC @ 10V

Current Rating

80A

Vgs (Max)

±20V

Continuous Drain Current (ID)

80A

Drain-source On Resistance-Max

0.006Ohm

Pulsed Drain Current-Max (IDM)

320A

Avalanche Energy Rating (Eas)

800 mJ

RoHS Status

Non-RoHS Compliant

JESD-30 Code

R-PSIP-T3

Lead Free

Contains Lead

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