IXYS IXBK75N170

SKU: IXBK75N170-9

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Manufacturer Part :
IXBK75N170
Manufacturer :
IXYS
Package :
TO-264-3, TO-264AA
RoHS :
ROHS3 Compliant
IXBK75N170 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

BIMOSFET™

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

28 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

1.04kW

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2003

Base Part Number

IXB*75N170

Max Collector Current

200A

Reverse Recovery Time

1.5 μs

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

1040W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.1V

Pin Count

3

JESD-30 Code

R-PSFM-T3

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

277 ns

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 75A

Turn Off Time-Nom (toff)

840 ns

Gate Charge

350nC

Current - Collector Pulsed (Icm)

580A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

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