IXYS IXBT42N170

SKU: IXBT42N170-9

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Manufacturer Part :
IXBT42N170
Manufacturer :
IXYS
Package :
RoHS :
ROHS3 Compliant
IXBT42N170 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

BIMOSFET™

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Turn Off Delay Time

560 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Reach Compliance Code

unknown

Factory Lead Time

24 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

PURE TIN

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

360W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2008

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

80A

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

45 ns

Power - Max

360W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXB*42N170

Pin Count

4

Reverse Recovery Time

1.32 μs

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

224 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 42A

Turn Off Time-Nom (toff)

1070 ns

Gate Charge

188nC

Current - Collector Pulsed (Icm)

300A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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