IXYS IXDP35N60B

SKU: IXDP35N60B-9

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Manufacturer Part :
IXDP35N60B
Manufacturer :
IXYS
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IXDP35N60B Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

300V, 35A, 10 Ω, 15V

Base Part Number

IXD*35N60

Factory Lead Time

32 Weeks

Published

2000

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

HIGH SPEED

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 35A

Turn Off Time-Nom (toff)

390 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

JEDEC-95 Code

TO-220AB

Turn On Time

75 ns

Qualification Status

Not Qualified

Element Configuration

Single

IGBT Type

NPT

Gate Charge

120nC

Current - Collector Pulsed (Icm)

70A

Switching Energy

1.6mJ (on), 800μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Height

9.15mm

Length

10.66mm

Width

4.82mm

RoHS Status

ROHS3 Compliant

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