IXYS IXDR30N120

SKU: IXDR30N120-9

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Manufacturer Part :
IXDR30N120
Manufacturer :
IXYS
Package :
ISOPLUS247™
RoHS :
ROHS3 Compliant
IXDR30N120 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2004

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 30A, 47 Ω, 15V

Turn Off Delay Time

500 ns

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXD*30N120

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

32 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

200W

Case Connection

ISOLATED

Input Type

Standard

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Rise Time

70ns

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 30A

Pin Count

3

Turn Off Time-Nom (toff)

570 ns

IGBT Type

NPT

Gate Charge

120nC

Current - Collector Pulsed (Icm)

60A

Switching Energy

4.6mJ (on), 3.4mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity

NPN

Lead Free

Lead Free

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