IXYS IXEH40N120

SKU: IXEH40N120-9

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Manufacturer Part :
IXEH40N120
Manufacturer :
IXYS
Package :
TO-3P-3 Full Pack
RoHS :
RoHS Compliant
IXEH40N120 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 40A, 39 Ω, 15V

JESD-30 Code

R-PSFM-T3

Mount

Through Hole

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Qualification Status

Not Qualified

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3V

Max Collector Current

60A

Reverse Recovery Time

180 ns

Element Configuration

Single

Case Connection

COLLECTOR

Turn On Time

135 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 40A

Turn Off Time-Nom (toff)

490 ns

IGBT Type

NPT

Gate Charge

150nC

Switching Energy

6.1mJ (on), 3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

RoHS Compliant

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