IXYS IXER60N120

SKU: IXER60N120-9

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Manufacturer Part :
IXER60N120
Manufacturer :
IXYS
Package :
ISOPLUS247™
RoHS :
RoHS Compliant
IXER60N120 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2006

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 60A, 22 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

JESD-609 Code

e1

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

375W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

130 ns

Element Configuration

Single

Power Dissipation

375W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

50ns

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

95A

Qualification Status

Not Qualified

Polarity

NPN

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 60A

Turn Off Time-Nom (toff)

710 ns

IGBT Type

NPT

Gate Charge

350nC

Switching Energy

7.2mJ (on), 4.8mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

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