IXYS IXFB210N30P3

SKU: IXFB210N30P3-11

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Manufacturer Part :
IXFB210N30P3
Manufacturer :
IXYS
Package :
TO-264-3, TO-264AA
RoHS :
ROHS3 Compliant
IXFB210N30P3 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Number of Pins

264

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

210A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

1890W Tc

Element Configuration

Single

Turn Off Delay Time

94 ns

Packaging

Tube

Published

2012

Series

HiPerFET™, Polar3™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

AVALANCHE RATED

JESD-30 Code

R-PSIP-T3

Mount

Surface Mount, Through Hole

Factory Lead Time

26 Weeks

Continuous Drain Current (ID)

210A

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

14.5m Ω @ 105A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds

16200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

268nC @ 10V

Drain to Source Voltage (Vdss)

300V

Vgs (Max)

±20V

Threshold Voltage

5V

Gate to Source Voltage (Vgs)

20V

Operating Mode

ENHANCEMENT MODE

Drain-source On Resistance-Max

0.0145Ohm

Pulsed Drain Current-Max (IDM)

550A

DS Breakdown Voltage-Min

300V

Avalanche Energy Rating (Eas)

4000 mJ

Height

26.59mm

Length

20.29mm

Width

5.31mm

REACH SVHC

No SVHC

Turn On Delay Time

46 ns

RoHS Status

ROHS3 Compliant

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