IXYS IXFH30N50Q3

SKU: IXFH30N50Q3-11

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Manufacturer Part :
IXFH30N50Q3
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXFH30N50Q3 Datasheet :
IXFH30N50Q3

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Description

Specification

Processor

Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

30A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

690W Tc

Qualification Status

Not Qualified

Factory Lead Time

20 Weeks

Packaging

Tube

Published

2008

Series

HiPerFET™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

AVALANCHE RATED

Reach Compliance Code

unknown

Pin Count

3

Turn Off Delay Time

26 ns

Element Configuration

Single

Vgs (Max)

±20V

Continuous Drain Current (ID)

30A

Case Connection

DRAIN

Turn On Delay Time

14 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

200m Ω @ 15A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Rise Time

250ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

690W

JEDEC-95 Code

TO-247AD

Gate to Source Voltage (Vgs)

30V

Drain-source On Resistance-Max

0.2Ohm

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

90A

Avalanche Energy Rating (Eas)

1500 mJ

Height

16.26mm

Length

16.26mm

Width

5.3mm

RoHS Status

ROHS3 Compliant

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