IXYS IXFH66N20Q

SKU: IXFH66N20Q-11

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Manufacturer Part :
IXFH66N20Q
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
RoHS Compliant
IXFH66N20Q Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Packaging

Tube

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

66A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

400W Tc

Turn Off Delay Time

50 ns

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Published

2003

Series

HiPerFET™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Rise Time

18ns

Element Configuration

Single

Power Dissipation

400W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

40m Ω @ 33A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±30V

Fall Time (Typ)

14 ns

Qualification Status

Not Qualified

Continuous Drain Current (ID)

66A

JEDEC-95 Code

TO-247AD

Gate to Source Voltage (Vgs)

30V

Drain-source On Resistance-Max

0.04Ohm

Drain to Source Breakdown Voltage

200V

Pulsed Drain Current-Max (IDM)

264A

Avalanche Energy Rating (Eas)

1500 mJ

RoHS Status

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Lead Free

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