IXYS IXFH80N20Q

SKU: IXFH80N20Q-11

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Manufacturer Part :
IXFH80N20Q
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
RoHS Compliant
IXFH80N20Q Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

80A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

360W Tc

Resistance

28MOhm

Factory Lead Time

8 Weeks

Packaging

Tube

Published

2000

Series

HiPerFET™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

ECCN Code

EAR99

Turn Off Delay Time

75 ns

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id

4V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 25V

Current Rating

80A

Pin Count

3

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

360W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

28m Ω @ 500mA, 10V

Additional Feature

AVALANCHE RATED

Voltage - Rated DC

200V

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Rise Time

50ns

Vgs (Max)

±20V

Fall Time (Typ)

20 ns

Continuous Drain Current (ID)

80A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

200V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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