IXYS IXFT30N50Q3

SKU: IXFT30N50Q3-11

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Manufacturer Part :
IXFT30N50Q3
Manufacturer :
IXYS
Package :
RoHS :
ROHS3 Compliant
IXFT30N50Q3 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Packaging

Tube

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

30A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

690W Tc

Turn Off Delay Time

26 ns

JESD-30 Code

R-PSSO-G2

Factory Lead Time

26 Weeks

Published

2011

Series

HiPerFET™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Additional Feature

AVALANCHE RATED

Terminal Form

GULL WING

Reach Compliance Code

unknown

Pin Count

4

Operating Temperature

-55°C~150°C TJ

Qualification Status

Not Qualified

Rise Time

250ns

Vgs (Max)

±20V

Power Dissipation

690W

Case Connection

DRAIN

Turn On Delay Time

14 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

200m Ω @ 15A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current (ID)

30A

Gate to Source Voltage (Vgs)

30V

Drain-source On Resistance-Max

0.2Ohm

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

90A

Avalanche Energy Rating (Eas)

1500 mJ

Height

5.1mm

Length

16.05mm

Width

14mm

RoHS Status

ROHS3 Compliant

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