IXYS IXGA20N120B3

SKU: IXGA20N120B3-9

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Manufacturer Part :
IXGA20N120B3
Manufacturer :
IXYS
Package :
RoHS :
ROHS3 Compliant
IXGA20N120B3 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 16A, 15 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2009

JESD-609 Code

e3

Pbfree Code

yes

Series

GenX3™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

PURE TIN

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

180W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mount

Surface Mount

Factory Lead Time

30 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

61 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

180W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.1V

Max Collector Current

36A

JEDEC-95 Code

TO-263AA

JESD-30 Code

R-PSSO-G2

Pin Count

4

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 16A

Turn Off Time-Nom (toff)

720 ns

IGBT Type

PT

Gate Charge

51nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

16ns/150ns

Switching Energy

920μJ (on), 560μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

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