IXYS IXGH120N30B3

SKU: IXGH120N30B3-9

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Manufacturer Part :
IXGH120N30B3
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXGH120N30B3 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

GenX3™

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

300V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

24 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

540W

Published

2008

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

300V

Max Collector Current

75A

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

540W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*120N30

Pin Count

3

Turn On Time

41 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 120A

Turn Off Time-Nom (toff)

356 ns

IGBT Type

PT

Gate Charge

225nC

Current - Collector Pulsed (Icm)

480A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant

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