IXYS IXGH30N60A

SKU: IXGH30N60A-9

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Manufacturer Part :
IXGH30N60A
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
RoHS Compliant
IXGH30N60A Datasheet :
IXGH30N60A

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Description

Specification

Processor

Manufacturer

IXYS

Published

1997

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature (Max.)

150°C

Turn Off Delay Time

500 ns

Rise Time-Max

200ns

Mount

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

HIGH SPEED

Max Power Dissipation

200W

Base Part Number

IXG*30N60

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Packaging

Tube

Element Configuration

Single

JEDEC-95 Code

TO-247AD

Drain to Source Breakdown Voltage

600V

Input Type

Standard

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3V

Max Collector Current

50A

Continuous Drain Current (ID)

60A

Power Dissipation

200W

Case Connection

COLLECTOR

Turn On Time

300 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 30A

Drain to Source Resistance

2.6Ohm

Turn Off Time-Nom (toff)

850 ns

Gate-Emitter Voltage-Max

30V

VCEsat-Max

3 V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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