IXYS IXGH56N60A3

SKU: IXGH56N60A3-9

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Manufacturer Part :
IXGH56N60A3
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXGH56N60A3 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

GenX3™

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 44A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

30 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

330W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2009

Pin Count

3

Turn On Time

66 ns

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 44A

Element Configuration

Single

Power Dissipation

330W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.35V

Max Collector Current

150A

JEDEC-95 Code

TO-247AD

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

910 ns

IGBT Type

PT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

370A

Td (on/off) @ 25°C

26ns/310ns

Switching Energy

1mJ (on), 3.75mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

550ns

RoHS Status

ROHS3 Compliant

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