IXYS IXGK50N60B2D1

SKU: IXGK50N60B2D1-9

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Manufacturer Part :
IXGK50N60B2D1
Manufacturer :
IXYS
Package :
TO-264-3, TO-264AA
RoHS :
ROHS3 Compliant
IXGK50N60B2D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

TO-264-3, TO-264AA

Weight

10.000011g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2004

Series

HiPerFAST™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

400W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Reverse Recovery Time

35 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

400W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Pin Count

3

Base Part Number

IXG*50N60

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Turn Off Time-Nom (toff)

430 ns

IGBT Type

PT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

18ns/190ns

Switching Energy

550μJ (off)

JESD-30 Code

R-PSFM-T3

RoHS Status

ROHS3 Compliant

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