IXYS IXGQ50N60B4D1

SKU: IXGQ50N60B4D1-9

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Manufacturer Part :
IXGQ50N60B4D1
Manufacturer :
IXYS
Package :
TO-3P-3, SC-65-3
RoHS :
RoHS Compliant
IXGQ50N60B4D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Qualification Status

Not Qualified

Package / Case

TO-3P-3, SC-65-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 36A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2011

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

300W

Reach Compliance Code

unknown

Pin Count

2

JESD-30 Code

R-PSFM-T3

Mounting Type

Through Hole

Mount

Through Hole

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 36A

Turn Off Time-Nom (toff)

500 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

100A

Reverse Recovery Time

25 ns

Turn On Time

76 ns

Power Dissipation

300W

Element Configuration

Single

IGBT Type

PT

Gate Charge

110nC

Current - Collector Pulsed (Icm)

230A

Td (on/off) @ 25°C

37ns/330ns

Switching Energy

930μJ (on), 1mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Case Connection

COLLECTOR

RoHS Status

RoHS Compliant

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