IXYS IXGQ50N60C4D1

SKU: IXGQ50N60C4D1-9

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Manufacturer Part :
IXGQ50N60C4D1
Manufacturer :
IXYS
Package :
TO-3P-3, SC-65-3
RoHS :
RoHS Compliant
IXGQ50N60C4D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Qualification Status

Not Qualified

Package / Case

TO-3P-3, SC-65-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 36A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2011

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

300W

Terminal Position

SINGLE

Reach Compliance Code

unknown

Pin Count

2

JESD-30 Code

R-PSFM-T3

Mounting Type

Through Hole

Mount

Through Hole

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 36A

Turn Off Time-Nom (toff)

306 ns

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

90A

Reverse Recovery Time

25 ns

Turn On Time

75 ns

Case Connection

COLLECTOR

Configuration

SINGLE WITH BUILT-IN DIODE

IGBT Type

PT

Gate Charge

113nC

Current - Collector Pulsed (Icm)

220A

Td (on/off) @ 25°C

40ns/270ns

Switching Energy

950μJ (on), 840μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Input Type

Standard

RoHS Status

RoHS Compliant

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