IXYS IXGR50N60B

SKU: IXGR50N60B-9

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Manufacturer Part :
IXGR50N60B
Manufacturer :
IXYS
Package :
ISOPLUS247™
RoHS :
RoHS Compliant
IXGR50N60B Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2004

Series

HiPerFAST™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Turn On Time

110 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Pin Count

3

Base Part Number

IXG*50N60

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Turn Off Time-Nom (toff)

375 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/110ns

Switching Energy

3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

JESD-30 Code

R-PSIP-T3

RoHS Status

RoHS Compliant

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