IXYS IXGT20N140C3H1

SKU: IXGT20N140C3H1-9

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Manufacturer Part :
IXGT20N140C3H1
Manufacturer :
IXYS
Package :
RoHS :
RoHS Compliant
IXGT20N140C3H1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.4kV

Number of Elements

1

Test Conditions

700V, 20A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2010

JESD-609 Code

e3

Pbfree Code

yes

Series

GenX3™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Additional Feature

ULTRA FAST

Max Power Dissipation

250W

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Surface Mount

Factory Lead Time

20 Weeks

Voltage - Collector Emitter Breakdown (Max)

1400V

Turn On Time

35 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

250W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

5V

Max Collector Current

42A

Reverse Recovery Time

70 ns

JESD-30 Code

R-PSSO-G2

Pin Count

4

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 20A

Turn Off Time-Nom (toff)

524 ns

IGBT Type

PT

Gate Charge

88nC

Current - Collector Pulsed (Icm)

108A

Td (on/off) @ 25°C

19ns/110ns

Switching Energy

1.35mJ (on), 440μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

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