IXYS IXGT24N60CD1

SKU: IXGT24N60CD1-9

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Manufacturer Part :
IXGT24N60CD1
Manufacturer :
IXYS
Package :
RoHS :
RoHS Compliant
IXGT24N60CD1 Datasheet :
IXGT24N60CD1

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Description

Specification

Processor

Manufacturer

IXYS

JESD-609 Code

e3

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2000

Base Part Number

IXG*24N60

Series

HiPerFAST™, Lightspeed™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

150W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Mount

Surface Mount

Reverse Recovery Time

25 ns

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

48A

Turn On Time

15 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Pin Count

3

Turn Off Time-Nom (toff)

130 ns

Gate Charge

55nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

15ns/75ns

Switching Energy

240μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

110ns

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

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