IXYS IXGT30N60B2

SKU: IXGT30N60B2-9

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Manufacturer Part :
IXGT30N60B2
Manufacturer :
IXYS
Package :
RoHS :
RoHS Compliant
IXGT30N60B2 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

HiPerFAST™

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Surface Mount

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

190W

Terminal Form

GULL WING

Published

2003

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

70A

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

190W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*30N60

Pin Count

4

Turn On Time

30 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 24A

Turn Off Time-Nom (toff)

350 ns

IGBT Type

PT

Gate Charge

66nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

13ns/110ns

Switching Energy

320μJ (off)

RoHS Status

RoHS Compliant

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