IXYS IXGT32N120A3

SKU: IXGT32N120A3-9

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Manufacturer Part :
IXGT32N120A3
Manufacturer :
IXYS
Package :
RoHS :
ROHS3 Compliant
IXGT32N120A3 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2011

Reach Compliance Code

unknown

Factory Lead Time

26 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

PURE TIN

Max Power Dissipation

300W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Series

GenX3™

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

75A

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

300W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Turn On Time

239 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 32A

Turn Off Time-Nom (toff)

1380 ns

IGBT Type

PT

Gate Charge

89nC

Current - Collector Pulsed (Icm)

230A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant

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