IXYS IXGT40N120B2D1

SKU: IXGT40N120B2D1-9

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Manufacturer Part :
IXGT40N120B2D1
Manufacturer :
IXYS
Package :
RoHS :
ROHS3 Compliant
IXGT40N120B2D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 40A, 2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

4

Factory Lead Time

8 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

PURE TIN

Max Power Dissipation

380W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*40N120

Published

2008

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 40A

Turn Off Time-Nom (toff)

770 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

380W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

75A

Reverse Recovery Time

100 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

79 ns

Qualification Status

Not Qualified

Element Configuration

Single

IGBT Type

PT

Gate Charge

138nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

21ns/290ns

Switching Energy

4.5mJ (on), 3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

270ns

Height

5.1mm

Length

16.05mm

Width

14mm

RoHS Status

ROHS3 Compliant

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