IXYS IXGT50N90B2

SKU: IXGT50N90B2-9

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Manufacturer Part :
IXGT50N90B2
Manufacturer :
IXYS
Package :
RoHS :
ROHS3 Compliant
IXGT50N90B2 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2005

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

720V, 50A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

8 Weeks

Series

HiPerFAST™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

PURE TIN

Max Power Dissipation

400W

Terminal Form

GULL WING

Packaging

Tube

Reach Compliance Code

unknown

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

400W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*50N90

Max Collector Current

75A

Turn On Time

48 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Turn Off Time-Nom (toff)

820 ns

IGBT Type

PT

Gate Charge

135nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

20ns/350ns

Switching Energy

4.7mJ (off)

RoHS Status

ROHS3 Compliant

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