IXYS IXGT72N60B3

SKU: IXGT72N60B3-9

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Manufacturer Part :
IXGT72N60B3
Manufacturer :
IXYS
Package :
RoHS :
ROHS3 Compliant
IXGT72N60B3 Datasheet :
IXGT72N60B3

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Description

Specification

Processor

Manufacturer

IXYS

Part Status

Active

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Operating Temperature (Max.)

150°C

Test Conditions

480V, 50A, 3 Ω, 15V

Packaging

Tube

Series

GenX3™

JESD-609 Code

e3

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pbfree Code

yes

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

540W

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Mount

Surface Mount

Factory Lead Time

20 Weeks

Turn On Time

63 ns

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

540W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

75A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 60A

Turn Off Time-Nom (toff)

370 ns

Pin Count

4

IGBT Type

PT

Gate Charge

230nC

Current - Collector Pulsed (Icm)

400A

Td (on/off) @ 25°C

31ns/150ns

Switching Energy

1.38mJ (on), 1.05mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

160ns

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

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