IXYS IXGX50N60BD1

SKU: IXGX50N60BD1-9

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Manufacturer Part :
IXGX50N60BD1
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
RoHS Compliant
IXGX50N60BD1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2.7 Ω, 15V

Turn Off Delay Time

200 ns

Operating Temperature

-55°C~150°C TJ

Published

2000

Series

HiPerFAST™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

HIGH SPEED

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

50 ns

Turn On Time

110 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

50 ns

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Pin Count

3

Base Part Number

IXG*50N60

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Turn Off Time-Nom (toff)

375 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

1.5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

RoHS Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

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