IXYS IXST45N120B

SKU: IXST45N120B-9

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Manufacturer Part :
IXST45N120B
Manufacturer :
IXYS
Package :
RoHS :
RoHS Compliant
IXST45N120B Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Pin Count

3

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 45A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

300W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Mount

Surface Mount

Turn On Time

67 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 45A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

75A

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

JESD-30 Code

R-PSSO-G2

Turn Off Time-Nom (toff)

1140 ns

IGBT Type

PT

Gate Charge

120nC

Current - Collector Pulsed (Icm)

180A

Td (on/off) @ 25°C

36ns/360ns

Switching Energy

13mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Element Configuration

Single

RoHS Status

RoHS Compliant

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