IXYS IXSX35N120BD1

SKU: IXSX35N120BD1-9

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Manufacturer Part :
IXSX35N120BD1
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
RoHS Compliant
IXSX35N120BD1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2000

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

7.300002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 35A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXS*35N120

Mount

Through Hole

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Pin Count

3

Turn On Time

67 ns

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 35A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

70A

Reverse Recovery Time

40 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Element Configuration

Single

Turn Off Time-Nom (toff)

580 ns

IGBT Type

PT

Gate Charge

120nC

Current - Collector Pulsed (Icm)

140A

Td (on/off) @ 25°C

36ns/160ns

Switching Energy

5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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