IXYS IXTA7N60P

SKU: IXTA7N60P-9

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Manufacturer Part :
IXTA7N60P
Manufacturer :
IXYS
Package :
-
RoHS :
IXTA7N60P Datasheet :
IXTA7N60P

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  • Warranty 1 year
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Description

Specification

Processor

Manufacturer

IXYS Corporation

Package Description

SMALL OUTLINE, R-PSSO-G2

Number of Terminals

2

Transistor Element Material

SILICON

Drain Current-Max (ID)

7 A

Ihs Manufacturer

IXYS CORP

Manufacturer Part Number

IXTA7N60P

Moisture Sensitivity Level

2

Operating Temperature-Max

150 °C

Pbfree Code

Yes

Surface Mount

YES

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Part Life Cycle Code

Obsolete

Part Package Code

D2PAK

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

5.83

Rohs Code

Yes

JESD-609 Code

e3

Package Body Material

PLASTIC/EPOXY

Terminal Finish

Matte Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Number of Elements

1

Additional Feature

AVALANCHE RATED

Terminal Position

SINGLE

Case Connection

DRAIN

Transistor Application

SWITCHING

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-263AB

Drain-source On Resistance-Max

1.1 Ω

Pulsed Drain Current-Max (IDM)

14 A

DS Breakdown Voltage-Min

600 V

Avalanche Energy Rating (Eas)

400 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

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