IXYS IXXH50N60B3

SKU: IXXH50N60B3-9

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Manufacturer Part :
IXXH50N60B3
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXXH50N60B3 Datasheet :
IXXH50N60B3

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  • Warranty 1 year
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Description

Specification

Processor

Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature (Max.)

175°C

JESD-30 Code

R-PSFM-T3

Factory Lead Time

28 Weeks

Published

2013

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

600W

Terminal Position

SINGLE

Pin Count

3

Test Conditions

360V, 36A, 5 Ω, 15V

Qualification Status

Not Qualified

Turn On Time

75 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 36A

Input Type

Standard

Power - Max

600W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

120A

JEDEC-95 Code

TO-247AD

Configuration

SINGLE

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

320 ns

IGBT Type

PT

Gate Charge

70nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

27ns/100ns

Switching Energy

670μJ (on), 740μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

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