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| Manufacturer |
IXYS |
|---|---|
| Series |
GenX3™ |
| Package / Case |
24-PowerSMD, 21 Leads |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
400A |
| Number of Elements |
1 |
| Test Conditions |
480V, 100A, 1 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PDSO-G21 |
| Published |
2011 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
21 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
30 Weeks |
| Turn On Time |
107 ns |
| Configuration |
SINGLE |
| Input Type |
Standard |
| Power - Max |
1000W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
66ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation-Max (Abs) |
1000W |
| Vce(on) (Max) @ Vge, Ic |
1.5V @ 15V, 100A |
| Turn Off Time-Nom (toff) |
595 ns |
| Qualification Status |
Not Qualified |
| IGBT Type |
PT |
| Gate Charge |
585nC |
| Current - Collector Pulsed (Icm) |
1000A |
| Td (on/off) @ 25°C |
44ns/250ns |
| Switching Energy |
2.7mJ (on), 5mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Case Connection |
ISOLATED |
| RoHS Status |
RoHS Compliant |
In stock
| Manufacturer |
Infineon |
|---|---|
| Base Product Number |
SIGC84 |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Product Status |
Active |
| Series |
TrenchStop™ |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Current - Collector Pulsed (Icm) |
225 A |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.35kV |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tube |
| Published |
2013 |
| Series |
TrenchStop® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Collector Emitter Voltage (VCEO) |
1.35kV |
| Max Collector Current |
40A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
288W |
| Transistor Application |
POWER CONTROL |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Max Power Dissipation |
288W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1350V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
450 ns |
| Gate Charge |
170nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
-/235ns |
| Switching Energy |
950μJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Dual |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 27A, 10 Ω, 15V |
| Turn Off Delay Time |
240 ns |
| Packaging |
Tube |
| Published |
2000 |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
FAST SWITCHING |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
160W |
| Terminal Position |
SINGLE |
| Current Rating |
49A |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
196A |
| Turn On Delay Time |
26 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
18ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7V |
| Max Collector Current |
49A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
46 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 27A |
| Turn Off Time-Nom (toff) |
690 ns |
| Case Connection |
COLLECTOR |
| Power Dissipation |
160W |
| Td (on/off) @ 25°C |
26ns/240ns |
| Switching Energy |
370μJ (on), 1.81mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
8.77mm |
| Length |
10.54mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 31A, 10 Ω, 15V |
| Turn Off Delay Time |
650 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
160W |
| Packaging |
Tube |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
160W |
| Terminal Position |
SINGLE |
| Current Rating |
60A |
| Element Configuration |
Dual |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Current - Collector Pulsed (Icm) |
120A |
| Input Type |
Standard |
| Rise Time |
18ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.5V |
| Max Collector Current |
60A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
44 ns |
| Vce(on) (Max) @ Vge, Ic |
1.5V @ 15V, 31A |
| Turn Off Time-Nom (toff) |
1940 ns |
| Gate Charge |
100nC |
| Td (on/off) @ 25°C |
22ns/650ns |
| Switching Energy |
450μJ (on), 6.5mJ (off) |
| Case Connection |
COLLECTOR |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
570ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
22 ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Number of Elements |
1 |
| Test Conditions |
720V, 28A, 5 Ω, 15V |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Dual |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Current Rating |
51A |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
200W |
| Gate Charge |
160nC |
| Current - Collector Pulsed (Icm) |
204A |
| Turn On Delay Time |
29 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
26ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
51A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
54 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 28A |
| Turn Off Time-Nom (toff) |
370 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Td (on/off) @ 25°C |
29ns/110ns |
| Switching Energy |
190μJ (on), 1.06mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
220ns |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 22A, 3.3 Ω, 15V |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Factory Lead Time |
14 Weeks |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
308W |
| Current Rating |
60A |
| Element Configuration |
Single |
| Power Dissipation |
308W |
| Packaging |
Bulk |
| Input Type |
Standard |
| Gate Charge |
160nC |
| Current - Collector Pulsed (Icm) |
120A |
| Rise Time |
6ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.55V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
34 ns |
| Vce(on) (Max) @ Vge, Ic |
2.55V @ 15V, 35A |
| Turn Off Time-Nom (toff) |
142 ns |
| IGBT Type |
NPT |
| Turn On Delay Time |
26 ns |
| Transistor Application |
POWER CONTROL |
| Td (on/off) @ 25°C |
26ns/110ns |
| Switching Energy |
220μJ (on), 215μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 48A, 10 Ω, 15V |
| Turn Off Delay Time |
145 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Input Type |
Standard |
| Factory Lead Time |
26 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
300V |
| Max Power Dissipation |
330W |
| Current Rating |
96A |
| Base Part Number |
IRGP4063D |
| Element Configuration |
Single |
| Power Dissipation |
330W |
| Case Connection |
COLLECTOR |
| Packaging |
Tube |
| Turn On Delay Time |
60 ns |
| Gate Charge |
95nC |
| Current - Collector Pulsed (Icm) |
144A |
| Drain to Source Voltage (Vdss) |
300V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.14V |
| Max Collector Current |
96A |
| Reverse Recovery Time |
115 ns |
| Continuous Drain Current (ID) |
96A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
100 ns |
| Vce(on) (Max) @ Vge, Ic |
2.14V @ 15V, 48A |
| Turn Off Time-Nom (toff) |
210 ns |
| IGBT Type |
Trench |
| Transistor Application |
POWER CONTROL |
| Rise Time |
56ns |
| Td (on/off) @ 25°C |
60ns/145ns |
| Switching Energy |
625μJ (on), 1.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
46ns |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 75A, 10 Ω, 15V |
| Input Type |
Standard |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tube |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
454W |
| Rise Time-Max |
90ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Turn Off Delay Time |
200 ns |
| Turn On Delay Time |
50 ns |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
50ns/200ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
140A |
| Reverse Recovery Time |
155 ns |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
120 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench |
| Gate Charge |
150nC |
| Power - Max |
454W |
| Transistor Application |
POWER CONTROL |
| Switching Energy |
2.47mJ (on), 2.16mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
80ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.13mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Weight |
6.756g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 40A, 5 Ω, 15V |
| Current Rating |
64A |
| Factory Lead Time |
4 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
500W |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Single |
| Max Junction Temperature (Tj) |
150°C |
| Continuous Collector Current |
64A |
| Turn On Delay Time |
15 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
20ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
64A |
| Reverse Recovery Time |
112 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
| Power Dissipation |
500W |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
165 ns |
| IGBT Type |
NPT |
| Gate Charge |
220nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
15ns/110ns |
| Switching Energy |
2.3mJ (on), 1.1mJ (off) |
| Height |
29mm |
| Length |
20mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
96 ns |
| Current Rating |
54A |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
167W |
| Contact Plating |
Tin |
| Factory Lead Time |
4 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
17 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
16ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
54A |
| Reverse Recovery Time |
30 ns |
| Turn On Time |
33 ns |
| Continuous Collector Current |
60A |
| Turn Off Time-Nom (toff) |
180 ns |
| Base Part Number |
HGTG12N60 |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
167W |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 3 Ω, 15V |
| Turn Off Delay Time |
73 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
70A |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
290W |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Turn On Time |
28 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
15 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
70A |
| Reverse Recovery Time |
35 ns |
| Max Breakdown Voltage |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
160 ns |
| Base Part Number |
HGTG20N60 |
| Gate Charge |
142nC |
| Current - Collector Pulsed (Icm) |
280A |
| Td (on/off) @ 25°C |
15ns/73ns |
| Switching Energy |
105μJ (on), 150μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
290W |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 5A, 25 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
167W |
| Current Rating |
21A |
| Packaging |
Tube |
| Power Dissipation |
167W |
| Turn Off Time-Nom (toff) |
357 ns |
| IGBT Type |
NPT |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
21A |
| Reverse Recovery Time |
65 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
600V |
| Turn On Time |
35 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 5A |
| Continuous Collector Current |
21A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Gate Charge |
53nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
22ns/160ns |
| Switching Energy |
450μJ (on), 390μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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