Microchip APT100GT60B2RG

SKU: APT100GT60B2RG-9

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Manufacturer Part :
APT100GT60B2RG
Manufacturer :
Microchip
Package :
TO-247-3 Variant
RoHS :
APT100GT60B2RG Datasheet :
APT100GT60B2RG

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Description

Specification

Processor

Manufacturer

IDEC

Max Power Dissipation

500 W

Package / Case

TO-247-3 Variant

Surface Mount

NO

Number of Pins

3

Number of Terminals

3

Transistor Element Material

SILICON

Base Product Number

APT100

Ihs Manufacturer

MICROSEMI CORP

Manufacturer Part Number

ARN3-2220-11.11.11.00

Mfr

Microchip Technology

Operating Temperature-Max

150 °C

Package

Tube

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Package Description

FLANGE MOUNT, R-PSFM-T3

Part Life Cycle Code

Active

Part Package Code

TO-247

Product Status

Active

Risk Rank

5.03

Rohs Code

Yes

Turn-off Time-Nom (toff)

450 ns

Turn-on Time-Nom (ton)

115 ns

Operating Temperature

-55°C ~ 150°C (TJ)

Series

Thunderbolt IGBT®

Max Operating Temperature

150 °C

Min Operating Temperature

-55 °C

Additional Feature

HIGH RELIABILITY

Subcategory

Insulated Gate BIP Transistors

Mounting Type

Through Hole

Mount

Through Hole

Collector Emitter Breakdown Voltage

600 V

Voltage - Collector Emitter Breakdown (Max)

600 V

Pin Count

3

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Number of Elements

1

Configuration

SINGLE

Element Configuration

Single

Input Type

Standard

Power - Max

500 W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600 V

Max Collector Current

148 A

JEDEC-95 Code

TO-247

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Current - Collector (Ic) (Max)

148 A

Power Dissipation-Max (Abs)

500 W

Test Condition

400V, 100A, 4.3Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 100A

Collector Current-Max (IC)

148 A

IGBT Type

NPT

Collector-Emitter Voltage-Max

600 V

Gate Charge

460 nC

Current - Collector Pulsed (Icm)

300 A

Td (on/off) @ 25°C

40ns/320ns

Switching Energy

3.25mJ (on), 3.125mJ (off)

Gate-Emitter Voltage-Max

30 V

Gate-Emitter Thr Voltage-Max

5 V

Reach Compliance Code

compliant

Radiation Hardening

No

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