Microchip APT50GN60BDQ3G

SKU: APT50GN60BDQ3G-9

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Manufacturer Part :
APT50GN60BDQ3G
Manufacturer :
Microchip
Package :
TO-247-3
RoHS :
APT50GN60BDQ3G Datasheet :
APT50GN60BDQ3G

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Description

Specification

Processor

Manufacturer

Microchip

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Mounting Style

Through Hole

Base Product Number

APT50GN60

Brand

Microchip Technology / Atmel

Collector- Emitter Voltage VCEO Max

600 V

Packaging

Tube

Mounting Type

Through Hole

Maximum Operating Temperature

+ 175 C

Mfr

Microchip Technology

Minimum Operating Temperature

– 55 C

Package

Tube

Pd - Power Dissipation

366 W

Product Status

Active

Operating Temperature

-55°C ~ 175°C (TJ)

Factory Pack Quantity:Factory Pack Quantity

1

Subcategory

IGBTs

Test Condition

400V, 50A, 4.3Ohm, 15V

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 50A

Power Dissipation

366

Input Type

Standard

Power - Max

366 W

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

600 V

Current - Collector (Ic) (Max)

107 A

Technology

Si

Configuration

Single

Continuous Collector Current

107

IGBT Type

Trench Field Stop

Gate Charge

325 nC

Current - Collector Pulsed (Icm)

150 A

Td (on/off) @ 25°C

20ns/230ns

Switching Energy

1.185mJ (on), 1.565mJ (off)

Reverse Recovery Time (trr)

35 ns

Product Category

IGBT Transistors

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