Microchip APT75GP120B2G

SKU: APT75GP120B2G-9

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Manufacturer Part :
APT75GP120B2G
Manufacturer :
Microchip
Package :
TO-247-3 Variant
RoHS :
APT75GP120B2G Datasheet :
APT75GP120B2G

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Description

Specification

Processor

Manufacturer

Microchip

Max Power Dissipation

1.042 kW

Package / Case

TO-247-3 Variant

Number of Pins

3

Mounting Style

Through Hole

Base Product Number

APT75GP120

Brand

Microchip Technology / Atmel

Collector- Emitter Voltage VCEO Max

1.2 kV

Continuous Collector Current Ic Max

100 A

Factory Pack Quantity:Factory Pack Quantity

1

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

– 55 C

Package

Tube

Mfr

Microchip Technology

Pd - Power Dissipation

1.042 kW

Product Status

Active

Tradename

POWER MOS 7 IGBT

Unit Weight

0.580821 oz

Voltage Rating (DC)

1.2 kV

Operating Temperature

-55°C ~ 150°C (TJ)

Packaging

Tube

Series

POWER MOS 7®

Max Operating Temperature

150 °C

Min Operating Temperature

-55 °C

Subcategory

IGBTs

Mounting Type

Through Hole

Mount

Through Hole

Test Condition

600V, 75A, 5Ohm, 15V

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 75A

Element Configuration

Single

Input Type

Standard

Power - Max

1042 W

Product Type

IGBT Transistors

Collector Emitter Voltage (VCEO)

1.2 kV

Max Collector Current

100 A

Operating Temperature Range

– 55 C to + 150 C

Collector Emitter Breakdown Voltage

1.2 kV

Voltage - Collector Emitter Breakdown (Max)

1200 V

Current - Collector (Ic) (Max)

100 A

Collector Emitter Saturation Voltage

3.3 V

Current Rating

100 A

Technology

Si

Continuous Collector Current

100 A

IGBT Type

PT

Gate Charge

320 nC

Current - Collector Pulsed (Icm)

300 A

Td (on/off) @ 25°C

20ns/163ns

Switching Energy

1620µJ (on), 2500µJ (off)

Product Category

IGBT Transistors

Height

5.31 mm

Length

21.46 mm

Width

16.26 mm

Radiation Hardening

No

Configuration

Single

Lead Free

Lead Free

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