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Manufacturer |
Microchip Technology |
---|---|
Transistor Polarity |
-65°C ~ 175°C (TJ) |
Mounting Type |
3-SMD, No Lead |
Number of Pins |
3-UB (3.09×2.45) |
Base Product Number |
Microchip Technology |
Breakdown Voltage / V |
Microchip |
Maximum Operating Temperature |
Microchip Technology |
Number of Elements |
Tape & Reel (TR) |
Package |
Active |
Product Status |
Details |
Mount |
Surface Mount |
HTS Code |
Transistors |
Operating Temperature |
Bulk |
Power Dissipation |
360 mW |
Power - Max |
N-Channel |
Halogen Free |
16pF @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
40 V |
Drain to Source Voltage (Vdss) |
JFETs |
Highest Frequency Band |
30 mA @ 20 V |
Voltage - Cutoff (VGS off) @ Id |
40 V |
Voltage - Breakdown (V(BR)GSS) |
30 Ohms |
Current Drain (Id) - Max |
JFET |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
500 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4.5 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
3 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
50 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
100 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Base Product Number |
MMBFJ1 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
225 mW |
FET Type |
P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
7 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
3 V @ 10 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
125 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
30 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK170 |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Package |
Strip |
Product Status |
Active |
Operating Temperature |
-55°C ~ 135°C (TJ) |
Series |
LSK170X-1 |
Power - Max |
400 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 15V |
Current - Drain (Idss) @ Vds (Vgs=0) |
20 mA @ 10 V |
Voltage - Cutoff (VGS off) @ Id |
200 mV @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-6 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
5 mA |
Gate-Source Cutoff Voltage |
8 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
500 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
60 V |
Vgs - Gate-Source Breakdown Voltage |
– 60 V |
Technology |
Si |
Configuration |
Dual |
In stock
Manufacturer |
NEC |
---|---|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
Manufacturer Package Code |
PLSP0003ZD-A3 |
Manufacturer Part Number |
2SK425-T1B-A |
Package Description |
, |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MM |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
Pbfree Code |
Yes |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
3 |
Brand Name |
Renesas |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
44 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
197 W |
Rds On - Drain-Source Resistance |
33 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-3 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
47 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
242 W |
Rds On - Drain-Source Resistance |
33 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
37.4 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
203 W |
Rds On - Drain-Source Resistance |
44 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
Through Hole |
Id - Continuous Drain Current |
28 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
155 W |
Rds On - Drain-Source Resistance |
74 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
Configuration |
Single |
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