Microchip Technology APT25GT120BRDQ2G

SKU: APT25GT120BRDQ2G-9

Apple Shopping Event

Hurry and get discounts on all Apple devices up to 20%

Sale_coupon_15

Manufacturer Part :
APT25GT120BRDQ2G
Manufacturer :
Microchip Technology
Package :
TO-247-3
RoHS :
-
APT25GT120BRDQ2G Datasheet :
APT25GT120BRDQ2G

X
  • No products in the list
Add to quote
X
  • No products in the list
12 People watching this product now!
  • Pick up from the Woodmart Store

To pick up today

Free

  • Courier delivery

Our courier will deliver to the specified address

2-3 Days

Free

  • DHL Courier delivery

DHL courier will deliver to the specified address

2-3 Days

Free

  • Warranty 1 year
  • Free 30-Day returns

Payment Methods:

Description

Specification

Processor

Manufacturer

Microchip Technology

Collector- Emitter Voltage VCEO Max

1.2 kV

Mounting Type

Through Hole

Package / Case

TO-247-3

Surface Mount

NO

Supplier Device Package

TO-247 [B]

Weight

38.000013 g

Number of Terminals

3

Transistor Element Material

SILICON

Base Product Number

APT25GT120

Number of Elements

1

Operating Temperature-Max

150 °C

Collector-Emitter Breakdown Voltage

1.2 kV

Current-Collector (Ic) (Max)

54 A

Factory Pack QuantityFactory Pack Quantity

1

Ihs Manufacturer

MICROSEMI CORP

Manufacturer Part Number

APT25GT120BRDQ2G

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Mfr

Microchip Technology

Mounting Styles

Through Hole

Series

Thunderbolt IGBT®

Continuous Collector Current Ic Max

54 A

Reflow Temperature-Max (s)

NOT SPECIFIED

Package Body Material

PLASTIC/EPOXY

Package Description

ROHS COMPLIANT, TO-247, 3 PIN

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Part Life Cycle Code

Active

Part Package Code

TO-247

Pd - Power Dissipation

347 W

Product Status

Active

Package

Tube

Rohs Code

Yes

Risk Rank

1.18

Test Conditions

800V, 25A, 5Ohm, 15V

Tradename

Thunderbolt IGBT

Turn-off Time-Nom (toff)

186 ns

Turn-on Time-Nom (ton)

41 ns

Unit Weight

1.340411 oz

Voltage Rating (DC)

1.2 kV

Operating Temperature

-55°C ~ 150°C (TJ)

Packaging

Tube

Minimum Operating Temperature

– 55 C

Mount

Through Hole

Pin Count

3

Reach Compliance Code

unknown

Transistor Application

POWER CONTROL

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

347 W

Terminal Position

SINGLE

Terminal Form

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

Pbfree Code

Yes

Current Rating

54 A

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Configuration

Single

Element Configuration

Single

Power Dissipation

347

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

347 W

Collector Emitter Voltage (VCEO)

1.2 kV

Current - Collector Pulsed (Icm)

75 A

JESD-609 Code

e1

IGBT Type

NPT

ECCN Code

EAR99

Operating Temperature Range

– 55 C to + 150 C

JEDEC-95 Code

TO-247

Voltage - Collector Emitter Breakdown (Max)

1200 V

Power Dissipation-Max (Abs)

347 W

Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 25A

Collector Current-Max (IC)

54 A

Continuous Collector Current

54 A

Collector-Emitter Voltage-Max

1200 V

Radiation Hardening

No

Max Collector Current

54 A

Gate Charge

170 nC

Td (on/off) @ 25°C

14ns/150ns

Switching Energy

930µJ (on), 720µJ (off)

Gate-Emitter Voltage-Max

30 V

Gate-Emitter Thr Voltage-Max

6.5 V

Height

5.31 mm

Length

21.46 mm

Width

16.26 mm

Lead Free

Lead Free

Customer Reviews

0 reviews
0
0
0
0
0

There are no reviews yet.

Be the first to review “Microchip Technology APT25GT120BRDQ2G”

Your email address will not be published. Required fields are marked *

1 2 3 4 5
1 2 3 4 5
1 2 3 4 5