Microchip Technology APT25GT120BRG

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Description

Specification

Processor

Manufacturer	Microchip Technology
Maximum Operating Temperature	+ 150 C
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]
Base Product Number	APT25GT120
Collector- Emitter Voltage VCEO Max	1.2 kV
Continuous Collector Current Ic Max	54 A
Current-Collector (Ic) (Max)	54 A
Factory Pack QuantityFactory Pack Quantity	1
Tradename	Thunderbolt IGBT
Mounting Type	Through Hole
Mfr	Microchip Technology
Minimum Operating Temperature	– 55 C
Mounting Styles	Through Hole
Package	Tube
Pd - Power Dissipation	347 W
Product Status	Active
Test Conditions	800V, 25A, 5Ohm, 15V
Maximum Gate Emitter Voltage	– 30 V, + 30 V
Unit Weight	1.340411 oz
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 25A
Continuous Collector Current	54 A
Series	Thunderbolt IGBT®
Configuration	Single
Power Dissipation	347
Input Type	Standard
Power - Max	347 W
Operating Temperature Range	– 55 C to + 150 C
Voltage - Collector Emitter Breakdown (Max)	1200 V
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
IGBT Type	NPT
Gate Charge	170 nC
Current - Collector Pulsed (Icm)	75 A
Td (on/off) @ 25°C	14ns/150ns
Switching Energy	930µJ (on), 720µJ (off)
Height	5.31 mm
Length	21.46 mm
Width	16.26 mm

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Manufacturer	Infineon Technologies
Published	2013
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	600V, 20A, 10 Ω, 15V
Operating Temperature	-40°C~175°C TJ
Max Power Dissipation	288W
Factory Lead Time	26 Weeks
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Packaging	Tube
Peak Reflow Temperature (Cel)	NOT SPECIFIED
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	288W
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	40A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Turn On Time	92 ns
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 20A
Turn Off Time-Nom (toff)	685 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	-/260ns
Switching Energy	750μJ (off)
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Manufacturer	Infineon Technologies
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Collector-Emitter Breakdown Voltage	650V
Test Conditions	400V, 20A, 15 Ω, 15V
ECCN Code	EAR99
Factory Lead Time	16 Weeks
Published	2008
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	-40°C~175°C TJ
Terminal Finish	Tin (Sn)
Reverse Recovery Time	62 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Power Dissipation	255W
Input Type	Standard
Collector Emitter Voltage (VCEO)	1.65V
Max Collector Current	74A
Max Power Dissipation	255W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Gate Charge	95nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	22ns/165ns
Switching Energy	390μJ (on), 120μJ (off)
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Manufacturer	Infineon Technologies
Element Configuration	Dual
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 41A, 5 Ω, 15V
Turn Off Delay Time	650 ns
Operating Temperature	-55°C~150°C TJ
Published	2000
JESD-609 Code	e3
Packaging	Bulk
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Voltage - Rated DC	600V
Max Power Dissipation	200W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	250
Current Rating	70A
Time@Peak Reflow Temperature-Max (s)	30
Mount	Through Hole
Factory Lead Time	14 Weeks
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	33ns/650ns
Turn On Delay Time	33 ns
Rise Time	30ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.36V
Max Collector Current	70A
JEDEC-95 Code	TO-247AC
Turn On Time	62 ns
Vce(on) (Max) @ Vge, Ic	1.36V @ 15V, 41A
Turn Off Time-Nom (toff)	1700 ns
Gate Charge	180nC
Case Connection	COLLECTOR
Power Dissipation	200W
Switching Energy	720μJ (on), 8.27mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	600ns
Height	20.2946mm
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Radiation Hardening	No
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Manufacturer	Infineon Technologies
Packaging	Bulk
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 27A, 5 Ω, 15V
Turn Off Delay Time	120 ns
Element Configuration	Dual
Factory Lead Time	14 Weeks
Published	2000
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
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Terminal Position	SINGLE
Current Rating	55A
Operating Temperature	-55°C~150°C TJ
Power Dissipation	200W
Gate Charge	180nC
Current - Collector Pulsed (Icm)	220A
Turn On Delay Time	46 ns
Transistor Application	POWER CONTROL
Rise Time	33ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	55A
JEDEC-95 Code	TO-247AC
Turn On Time	74 ns
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 27A
Turn Off Time-Nom (toff)	272 ns
Case Connection	COLLECTOR
Input Type	Standard
Td (on/off) @ 25°C	46ns/120ns
Switching Energy	80μJ (on), 320μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	86ns
Height	20.2946mm
Length	15.875mm
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Manufacturer	Infineon Technologies
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
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ECCN Code	EAR99
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Current Rating	51A
Operating Temperature	-55°C~150°C TJ
Power Dissipation	200W
Gate Charge	160nC
Current - Collector Pulsed (Icm)	204A
Turn On Delay Time	29 ns
Transistor Application	POWER CONTROL
Rise Time	26ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	51A
JEDEC-95 Code	TO-247AC
Turn On Time	54 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 28A
Turn Off Time-Nom (toff)	370 ns
Case Connection	COLLECTOR
Input Type	Standard
Td (on/off) @ 25°C	29ns/110ns
Switching Energy	190μJ (on), 1.06mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	220ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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Manufacturer	Infineon Technologies
Case Connection	COLLECTOR
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
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Number of Elements	1
Test Conditions	960V, 24A, 5 Ω, 15V
Turn Off Delay Time	200 ns
Operating Temperature	-55°C~150°C TJ
Published	2000
Part Status	Last Time Buy
Packaging	Tube
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	1.2kV
Max Power Dissipation	200W
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Mount	Through Hole
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Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	35ns/200ns
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.7V
Max Collector Current	45A
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	49 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 24A
Turn Off Time-Nom (toff)	600 ns
Gate Charge	160nC
Turn On Delay Time	35 ns
Input Type	Standard
Switching Energy	530μJ (on), 1.41mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	500ns
Height	20.3mm
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Packaging	Bulk
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
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Input Type	Standard
Factory Lead Time	14 Weeks
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
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Current Rating	75A
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Power Dissipation	370W
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Current - Collector Pulsed (Icm)	150A
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Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	50 ns
JEDEC-95 Code	TO-247AC
Turn On Time	59 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 50A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	75A
Turn Off Time-Nom (toff)	190 ns
IGBT Type	NPT
Transistor Application	POWER CONTROL
Rise Time	26ns
Td (on/off) @ 25°C	34ns/130ns
Switching Energy	360μJ (on), 380μJ (off)
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Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	65ns
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Operating Temperature	-55°C~150°C TJ
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	600V, 40A, 5 Ω, 15V
Current Rating	64A
Factory Lead Time	4 Weeks
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Turn Off Delay Time	110 ns
Element Configuration	Single
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	64A
Turn On Delay Time	15 ns
Transistor Application	POWER CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	64A
Reverse Recovery Time	112 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	45 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 40A
Power Dissipation	500W
Input Type	Standard
Turn Off Time-Nom (toff)	165 ns
IGBT Type	NPT
Gate Charge	220nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	15ns/110ns
Switching Energy	2.3mJ (on), 1.1mJ (off)
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Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	390V, 20A, 3 Ω, 15V
Turn Off Delay Time	73 ns
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JESD-609 Code	e3
Pbfree Code	yes
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Reverse Recovery Time	35 ns
Max Breakdown Voltage	600V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Turn Off Time-Nom (toff)	160 ns
Base Part Number	HGTG20N60
Gate Charge	142nC
Current - Collector Pulsed (Icm)	280A
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Switching Energy	105μJ (on), 150μJ (off)
Height	20.82mm
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Manufacturer	ON Semiconductor
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
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Current Rating	72A
Factory Lead Time	44 Weeks
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
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HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Operating Temperature	-55°C~150°C TJ
Element Configuration	Single
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Input Type	Standard
Turn On Delay Time	24 ns
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Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	72A
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	42 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 27A
Continuous Collector Current	72A
Power Dissipation	500W
Case Connection	COLLECTOR
Gate Charge	270nC
Current - Collector Pulsed (Icm)	216A
Td (on/off) @ 25°C	24ns/195ns
Switching Energy	2.2mJ (on), 2.3mJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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SKU: HGTG5N120BND-9

Manufacturer	ON Semiconductor
JESD-609 Code	e3
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 5A, 25 Ω, 15V
Operating Temperature	-55°C~150°C TJ
Element Configuration	Single
Contact Plating	Tin
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	167W
Current Rating	21A
Packaging	Tube
Power Dissipation	167W
Turn Off Time-Nom (toff)	357 ns
IGBT Type	NPT
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	21A
Reverse Recovery Time	65 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Max Breakdown Voltage	600V
Turn On Time	35 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 5A
Continuous Collector Current	21A
Case Connection	COLLECTOR
Input Type	Standard
Gate Charge	53nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	22ns/160ns
Switching Energy	450μJ (on), 390μJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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