Microchip Technology APT50GF120B2RG

SKU: APT50GF120B2RG-9

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Manufacturer Part :
APT50GF120B2RG
Manufacturer :
Microchip Technology
Package :
T-Max-3
RoHS :
APT50GF120B2RG Datasheet :
APT50GF120B2RG

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Description

Specification

Processor

Manufacturer

Microchip Technology

Mfr

Microchip Technology

Mounting Type

Through Hole

Package / Case

T-Max-3

Number of Pins

3

Base Product Number

APT50GF120

Collector- Emitter Voltage VCEO Max

1.2 kV

Collector-Emitter Breakdown Voltage

1.2 kV

Current-Collector (Ic) (Max)

135 A

Factory Pack QuantityFactory Pack Quantity

1

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Packaging

Tube

Mount

Through Hole

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tube

Pd - Power Dissipation

781 W

Product Status

Active

Test Conditions

800V, 50A, 1Ohm, 15V

Turn Off Delay Time

260 ns

Voltage Rating (DC)

1.2 kV

Operating Temperature

-55°C ~ 150°C (TJ)

Maximum Operating Temperature

+ 150 C

Max Operating Temperature

150 °C

Voltage - Collector Emitter Breakdown (Max)

1200 V

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 50A

Current Rating

156 A

Configuration

Single

Element Configuration

Single

Power Dissipation

781

Input Type

Standard

Turn On Delay Time

25 ns

Power - Max

781 W

Collector Emitter Voltage (VCEO)

1.2 kV

Max Collector Current

135 A

Min Operating Temperature

-55 °C

Max Power Dissipation

781 W

Max Junction Temperature (Tj)

150 °C

Continuous Collector Current

135

IGBT Type

NPT

Gate Charge

340 nC

Current - Collector Pulsed (Icm)

150 A

Td (on/off) @ 25°C

25ns/260ns

Switching Energy

3.6mJ (on), 2.64mJ (off)

Height

25.96 mm

Radiation Hardening

No

Lead Free

Lead Free

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