Microchip Technology APT64GA90LD30

SKU: APT64GA90LD30-9

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Manufacturer Part :
APT64GA90LD30
Manufacturer :
Microchip Technology
Package :
TO-264-3
RoHS :
APT64GA90LD30 Datasheet :
APT64GA90LD30

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Description

Specification

Processor

Manufacturer

Microchip Technology

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Mounting Type

Through Hole

Package / Case

TO-264-3

Supplier Device Package

TO-264 [L]

Weight

10.6 g

Base Product Number

APT64GA90

Collector- Emitter Voltage VCEO Max

900 V

Collector-Emitter Breakdown Voltage

900 V

Continuous Collector Current Ic Max

117 A

Current-Collector (Ic) (Max)

117 A

Operating Temperature

-55°C ~ 150°C (TJ)

Mount

Through Hole

Maximum Operating Temperature

+ 150 C

Mfr

Microchip Technology

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tube

Pd - Power Dissipation

500 W

Product Status

Active

Test Conditions

600V, 38A, 4.7Ohm, 15V

Tradename

POWER MOS 8

Unit Weight

0.373904 oz

Factory Pack QuantityFactory Pack Quantity

1

Packaging

Tube

Operating Temperature Range

– 55 C to + 150 C

Voltage - Collector Emitter Breakdown (Max)

900 V

Min Operating Temperature

-55 °C

Max Power Dissipation

500 W

Configuration

Single

Element Configuration

Single

Power Dissipation

500

Input Type

Standard

Power - Max

500 W

Collector Emitter Voltage (VCEO)

900 V

Max Collector Current

117 A

Series

POWER MOS 8™

Max Operating Temperature

150 °C

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 38A

Continuous Collector Current

117 A

IGBT Type

PT

Gate Charge

162 nC

Current - Collector Pulsed (Icm)

193 A

Td (on/off) @ 25°C

18ns/131ns

Switching Energy

1192µJ (on), 1088µJ (off)

Height

5.21 mm

Length

26.49 mm

Width

20.5 mm

Radiation Hardening

No

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