Microchip Technology APTGT100TL60T3G

SKU: APTGT100TL60T3G-9

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Manufacturer Part :
APTGT100TL60T3G
Manufacturer :
Microchip Technology
Package :
SP3-32
RoHS :
APTGT100TL60T3G Datasheet :
APTGT100TL60T3G

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Description

Specification

Processor

Manufacturer

Microchip Technology

Number of Terminals

16

Maximum Gate Emitter Voltage

20 V

Mounting Type

Chassis Mount

Package / Case

SP3-32

Surface Mount

NO

Number of Pins

32

Supplier Device Package

SP3

Maximum Operating Temperature

+ 100 C

Turn-on Time-Nom (ton)

180 ns

Transistor Element Material

SILICON

Collector- Emitter Voltage VCEO Max

600 V

Collector-Emitter Breakdown Voltage

600 V

Current-Collector (Ic) (Max)

150 A

Factory Pack QuantityFactory Pack Quantity

1

Ihs Manufacturer

MICROSEMI CORP

Mfr

Microchip Technology

Part Life Cycle Code

Active

Base Product Number

APTGT100

Package Shape

RECTANGULAR

Mounting Styles

Chassis Mount

Number of Elements

4

Operating Temperature-Max

175 °C

Package

Bulk

Package Body Material

UNSPECIFIED

Package Description

FLANGE MOUNT, R-XUFM-X16

Minimum Operating Temperature

– 40 C

Turn-off Time-Nom (toff)

370 ns

Package Style

FLANGE MOUNT

Pd - Power Dissipation

340 W

Product Status

Active

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

5.68

Rohs Code

Yes

Manufacturer Part Number

APTGT100TL60T3G

Mount

Chassis Mount, Screw

Pin Count

25

Polarity/Channel Type

N-CHANNEL

Max Operating Temperature

175 °C

Min Operating Temperature

-40 °C

Max Power Dissipation

340 W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Input

Standard

JESD-30 Code

R-XUFM-X16

Qualification Status

Not Qualified

Configuration

Three Level Inverter

Power Dissipation

340

Case Connection

ISOLATED

Power - Max

340 W

Transistor Application

POWER CONTROL

Packaging

Tube

Operating Temperature

-40°C ~ 175°C (TJ)

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 100A

ECCN Code

EAR99

Max Collector Current

150 A

Current - Collector Cutoff (Max)

250 µA

Voltage - Collector Emitter Breakdown (Max)

600 V

Input Capacitance

6.1 nF

Power Dissipation-Max (Abs)

340 W

Collector Emitter Voltage (VCEO)

600 V

Continuous Collector Current

150

Collector Current-Max (IC)

150 A

IGBT Type

Trench Field Stop

Collector-Emitter Voltage-Max

600 V

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20 V

Input Capacitance (Cies) @ Vce

6.1 nF @ 25 V

VCEsat-Max

1.9 V

Radiation Hardening

No

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