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| Manufacturer |
Microsemi Corporation |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AF Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Finish |
TIN LEAD |
| Mount |
Through Hole |
| Packaging |
Bulk |
| Published |
1997 |
| JESD-609 Code |
e0 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
800mW Ta 25W Tc |
| Additional Feature |
HIGH RELIABILITY |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
800mW |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
320m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
34.8nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
6.5A |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
Non-RoHS Compliant |
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-523 |
| Weight |
2.012816mg |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| FET Type |
N-Channel |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
400MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
280mW Ta |
| Element Configuration |
Single |
| Power Dissipation |
280mW |
| Turn On Delay Time |
5.1 ns |
| Published |
2012 |
| Rds On (Max) @ Id, Vgs |
400mOhm @ 600mA, 4.5V |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
6V |
| Current - Continuous Drain (Id) @ 25°C |
630mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.74nC @ 4.5V |
| Rise Time |
7.4ns |
| Drain to Source Voltage (Vdss) |
20V |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
| Vgs (Max) |
±6V |
| Fall Time (Typ) |
12.3 ns |
| Turn-Off Delay Time |
26.7 ns |
| Continuous Drain Current (ID) |
630mA |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
60.67pF @ 16V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
60.67pF |
| Drain to Source Resistance |
300mOhm |
| Rds On Max |
400 mΩ |
| Height |
800μm |
| Length |
1.7mm |
| Width |
850μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Factory Lead Time |
10 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Voltage |
600V |
| Power Dissipation-Max |
1.8W Ta |
| Pbfree Code |
yes |
| Current |
12A |
| Fall Time (Typ) |
182 ns |
| Turn-Off Delay Time |
28 ns |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
| Rise Time |
5.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain to Source Breakdown Voltage |
600V |
| Recovery Time |
130 ns |
| FET Feature |
Depletion Mode |
| Height |
1.5mm |
| Length |
6.5mm |
| Width |
3.5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
PG-SOT223-4 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
1999 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation |
1.8W |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
4 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.8W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Threshold Voltage |
-1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 160μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
1.17A |
| Turn On Delay Time |
24 ns |
| FET Type |
P-Channel |
| Max Dual Supply Voltage |
-60V |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
-60V |
| Dual Supply Voltage |
-60V |
| Recovery Time |
46 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-1.5 V |
| Height |
1.8mm |
| Length |
6.5mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Resistance |
8MOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
110A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Termination |
SMD/SMT |
| Turn On Delay Time |
14 ns |
| JEDEC-95 Code |
TO-252 |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 62A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
| Rise Time |
101ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
65 ns |
| Turn-Off Delay Time |
50 ns |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Avalanche Energy Rating (Eas) |
264 mJ |
| Recovery Time |
104 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
10.54mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Resistance |
15MOhm |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Factory Lead Time |
12 Weeks |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
350W Tc |
| Element Configuration |
Single |
| Power Dissipation |
350W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
4.46nF |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Turn-Off Delay Time |
25 ns |
| Continuous Drain Current (ID) |
85A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
85A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
15 mΩ |
| Nominal Vgs |
5 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Resistance |
40mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
3.8A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1W Ta |
| Number of Terminations |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
3.8A |
| Threshold Voltage |
2V |
| Turn On Delay Time |
6.2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
12ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
35 ns |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
5.2A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
88 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2 V |
| Height |
1.8mm |
| Length |
6.6802mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Power Dissipation |
235W |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
UniFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
94MOhm |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
235W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
7 Weeks |
| Turn-Off Delay Time |
75 ns |
| Continuous Drain Current (ID) |
33A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
94m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2135pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
33A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
230ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
120 ns |
| Turn On Delay Time |
35 ns |
| Case Connection |
DRAIN |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
250V |
| Nominal Vgs |
3 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
11.33mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
PowerTrench® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
9MOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Current Rating |
44A |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
310W Tc |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Turn-Off Delay Time |
96 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
12A Ta 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
39ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Continuous Drain Current (ID) |
80A |
| Threshold Voltage |
4V |
| Power Dissipation |
310W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.08mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
30 ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pbfree Code |
yes |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
| Weight |
36mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
PowerTrench® |
| Power Dissipation |
1.6W |
| Factory Lead Time |
13 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.6W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| JESD-609 Code |
e3 |
| Turn On Delay Time |
7 ns |
| Continuous Drain Current (ID) |
4.9mA |
| Threshold Voltage |
-2.2V |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1005pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
4.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Rise Time |
4ns |
| Drain to Source Voltage (Vdss) |
30V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
4 ns |
| Turn-Off Delay Time |
33 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
4.9A |
| Drain-source On Resistance-Max |
0.042Ohm |
| Drain to Source Breakdown Voltage |
-30V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
3mm |
| Width |
1.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
I2PAK (TO-262) |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2002 |
| Series |
PowerTrench® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation-Max |
310W Tc |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
16mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
8A Ta 79A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
107nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pbfree Code |
yes |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
130mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Series |
PowerTrench® |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
18 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
21.8MOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Base Part Number |
FDS6675 |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta |
| Element Configuration |
Single |
| JESD-609 Code |
e4 |
| Power Dissipation |
2.5W |
| Turn-Off Delay Time |
120 ns |
| Continuous Drain Current (ID) |
11A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2470pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
11A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Rise Time |
7.8ns |
| Drain to Source Voltage (Vdss) |
30V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
60 ns |
| Turn On Delay Time |
3 ns |
| FET Type |
P-Channel |
| Threshold Voltage |
-2V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
-30V |
| Dual Supply Voltage |
-30V |
| Nominal Vgs |
-2 V |
| Feedback Cap-Max (Crss) |
500 pF |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Renesas Electronics America |
|---|---|
| Pin Count |
4 |
| Package / Case |
TO-3P-3, SC-65-3 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Power Dissipation-Max |
150W Ta |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 12.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
25A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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